| Autor: |
Herner, S. B., Vyvoda, M. A. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/8/2002, Vol. 81 Issue 2, p259, 3p, 2 Diagrams, 3 Graphs |
| Abstrakt: |
We have achieved low resistivity TiSi[sub 2] on 0.25 µm wide polysilicon lines doped to 5 × 10[sup 20] / cm³ with boron by use of in situ doping of polysilicon. By controlling the Si deposition such that an amorphous undoped "cap" was deposited on p[sup +] polycrystalline Si (polysilicon) subsequently formed TiSi[sub 2] wires had a lower resistivity consistent with C54 phase formation, while maintaining direct contact between TiSi[sub 2] and p[sup +] Si. When TiSi[sub 2] was formed directly on p[sup +] polysilicon, it had increasing resistivity as the linewidth decreased below 0.5 µm. The mechanism for lower resistivity TiSi[sub 2] is attributed to an increased density of C49-to-C54 phase transformation sites when the silicide is formed on amorphous undoped silicon. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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