Ion-beam-induced amorphization and recrystallization processes in SiC: Raman-scattering analysis.

Autor: Perez-Rodriguez, Alejandro, Serre, Christoph, Calvo-Barrio, L., Romano-Rodriguez, A., Morante, Juan R., Pacaud, Y., Koegler, R., Skorupa, Wolfgang
Zdroj: Proceedings of SPIE; Nov1995, Issue 1, p481-494, 14p
Databáze: Complementary Index