Simulation of surface effects in planar GaAs MESFET structures by use of a quasi-2D model.

Autor: Brockerhoff, Wolfgang, Versteegen, Michael, Bertenburg, Ralf, Seiler, Ulrich, Heime, Klaus
Zdroj: European Transactions on Telecommunications; Jul1990, Vol. 1 Issue 4, p389-392, 4p
Databáze: Complementary Index
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