| Autor: |
Maresˇ, Jirˇí J., Hubík, Pavel, Krisˇtofik, Jozef, Prusˇáková, Lucie, Uxa, Sˇteˇpán, Paskova, Tanya, Evans, Keith |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; Jul2011, Vol. 110 Issue 1, p013723, 6p, 1 Color Photograph, 1 Diagram, 1 Chart, 2 Graphs |
| Abstrakt: |
Semi-insulating iron-doped gallium nitride (GaN:Fe), a promising material for microwave electronics and optoelectronics, is characterized by means of current-voltage curves measured under non-equilibrium charge carrier injection conditions. To increase the electric field and enable local characterization of GaN:Fe, measurements are performed using a two-electrode configuration including a point contact with a diameter of 30 μm and large-area alloyed counter contact. Experimental evidence for various radial flow regimes corresponding to the universal 3/2 and quadratic power laws and to the so-called trap-filled-limit is presented. Furthermore, it is shown that the space-charge-limited current injected from the point contact may serve as a probe to measure both local and average scale density of electrically active traps, i.e., parameters that are necessary for GaN:Fe to be applied and optimized. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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