Lateral Transport in Strained SiGe Quantum Wells Doped with Boron.
| Autor: | Kagan, M. S., Altukhov, I. V., Korolev, K. A., Orlov, D. V., Sinis, V. P., Thomas, S. G., Wang, K. L., Yassievich, I. N. |
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| Zdroj: | Physica Status Solidi (B); Jan1999, Vol. 211 Issue 1, p495-499, 5p |
| Databáze: | Complementary Index |
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