| Autor: |
Peng, Chun-Yen, Tian, Jr-Sheng, Wang, Wei-Lin, Ho, Yen-Teng, Chuang, Shu-Chang, Chu, Ying-Hao, Chang, Li |
| Předmět: |
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| Zdroj: |
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; May2011, Vol. 29 Issue 3, p03A110, 4p |
| Abstrakt: |
The effect of growth temperature on a-plane ZnO formation on r-plane sapphire has been systematically investigated by employing in situ high pressure reflection high-energy electron diffraction, atomic force microscopy, and high-resolution x-ray diffraction. For film growth above and below 600 °C, it is shown that there is a significant difference in growth rate and surface morphology due to the differences in the growth mode. Stripelike morphologies were observed on the surface of a-plane ZnO grown at low temperature (LT) because of differences in the growth rate along the c-axis and the growth rate normal to the c-axis. Furthermore, annealing of films grown at low temperature results in more pronounced stripe morphology and in improvement of crystallinity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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