Self-Heating Effect Compensation in HBTs and Its Analysis and Simulation.

Autor: Zhu, Yu, Twynam, John K., Yagura, Motoji, Hasegawa, Masatomo, Hasegawa, Takao, Eguchi, Yoshihito, Amano, Yoshihisa, Suematsu, Eiji, Sakuno, Keiichi, Matsumoto, Noboyuki, Sato, Hiroya, Hashizume, Nobuo
Předmět:
Zdroj: IEEE Transactions on Electron Devices; Nov2001, Vol. 48 Issue 11, p2640, 7p, 11 Black and White Photographs, 1 Diagram, 1 Chart, 5 Graphs
Abstrakt: Provides information on a study that developed a technique to compensate self heating effect in direct current and pulse characteristics of heterojunction bipolar transistors. Methodologies used; Results; Conclusion.
Databáze: Complementary Index