| Autor: |
Dimler, S.J., Ng, J.S., Tozer, R.C., Rees, G.J., David, J.P.R. |
| Zdroj: |
IEEE Journal of Selected Topics in Quantum Electronics; Jul/Aug2007, Vol. 13 Issue 4, p919-925, 7p |
| Abstrakt: |
Characterization of Geiger-mode avalanche photodiodes operated in gated mode requires fast rising-edge, well-defined over-bias pulses, and effective avalanche quenching. There has not been a suitable circuit that meets both criteria, thus, making systematic characterization and accurate comparison of these devices difficult. We present a capacitive quenching circuit (CQC) that satisfies both criteria and, thus, offers advantages over existing options such as a gated passive quenching circuit (G-PQC) and gated-mode operation without avalanche quenching. Test results using a commercial Si Geiger-mode avalanche photodiode, together with an experimental comparison between the CQC and the standard G-PQC circuit, are reported. The advantages of the CQC over the G-PQC circuit are demonstrated through comparisons of experimental over-bias pulses, distribution of avalanche current pulses, and dark count rate data. By each metric, the CQC is shown to yield results that are superior to those obtained using a standard G-PQC circuit. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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