Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's.
Autor: | Henson, W.K., Yang, N., Wortman, J.J. |
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Zdroj: | IEEE Electron Device Letters; Dec1999, Vol. 20 Issue 12, p605-607, 3p |
Databáze: | Complementary Index |
Externí odkaz: |
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