Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors.
| Autor: | Henson, W.K., Ahmed, K.Z., Vogel, E.M., Hauser, J.R., Wortman, J.J., Venables, R.D., Xu, M., Venables, D. |
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| Zdroj: | IEEE Electron Device Letters; Apr1999, Vol. 20 Issue 4, p179-181, 3p |
| Databáze: | Complementary Index |
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