| Autor: |
Afsahi, Ali, Behzad, Arya, Magoon, Vikram, Larson, Lawrence E. |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; May2010, Vol. 45 Issue 5, p955-966, 12p |
| Abstrakt: |
Fully integrated dual-band power amplifiers with on-chip baluns for 802.11n MIMO WLAN applications are presented. With a 3.3 V supply, the PAs produce a saturated output power of 28.3 dBm and 26.7 dBm with peak drain efficiency of 35.3% and 25.3% for the 2.4 GHz and 5 GHz bands, respectively. By utilizing multiple fully self-contained linearization algorithms, an EVM of -25 dB is achieved at 22.4 dBm for the 2.4 GHz band and 20.5 dBm for the 5 GHz band while transmitting 54 Mbs OFDM. The chip is fabricated in standard 65 nm CMOS and the PAs occupy 0.31 mm² (2.4 GHz) and 0.27 mm² (5 GHz) area. To examine the reliability of the PAs, accelerated aging tests are performed for several hundreds parts without a single failure. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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