Oxygen incorporation in AllnP, and its effect on P-type doping with magnesium.

Autor: Stockman, S., Huang, J., Osentowski, T., Chui, H., Peanasky, M., Maranowski, S., Grillot, P., Moll, A., Chen, C., Kuo, C., Liang, B.
Zdroj: Journal of Electronic Materials; Jul1999, Vol. 28 Issue 7, p916-925, 10p
Abstrakt: Oxygen incorporation in AlyIn1−yP (y ∼ 0.5) grown by metalorganic chemical vapor deposition (MOCVD) has been studied as a function of PH3 flow, growth temperature, and alloy composition. Both O2 and diethylaluminum ethoxide (DEAlO) were employed as sources of oxygen. The incorporation of oxygen was found to be a superlinear function of O2 or DEAlO flow. When multiple sources of oxygen are present, a surface interaction leads to enhanced oxygen incorporation. Oxygen incorporation cannot be adequately described by a simple dependence on growth temperature or V/III ratio due to strong interactions between these variables. In Mg-doped AlInP co-doped with oxygen, the incorporation of both Mg and O is strongly affected by an interaction between the two species, and roughly 10% of the oxygen atoms act as compensating donors. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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