| Autor: |
Choi, W. K., Poon, F. W., Loh, F. C., Tan, K. L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/1/1997, Vol. 81 Issue 11, p7386, 6p |
| Abstrakt: |
We present the results of an investigation on the effects of rapid thermal annealing (RTA) temperature (T[sub p]) and time (t[sub p]) on the structural and electrical properties of silicon-silicon oxide systems. X-ray photoelectron spectroscopy (XPS) was used to provide information on the oxide composition of the annealed oxide sample. We found that a higher T[sub p] and/or a longer t[sub p] will increase the percentage of SiO[sub 2] in the annealed oxide layer and thus improve the oxide quality. We also discovered that increasing T[sub p] and/or t[sub p] will result in a thicker oxide layer. The suboxide density calculation based on the XPS results indicates that the Si-SiO[sub 2] interface of our RTA samples is not abrupt. We have used the conclusions obtained from the XPS study to provide satisfactory explanations for the different current versus voltage characteristics exhibited by our tunnel diodes. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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