| Autor: |
Asplund, C., Mogg, S., Plaine, G., Salomonsson, F., Chitica, N., Hammar, M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 7/15/2001, Vol. 90 Issue 2, p794, 7p, 3 Diagrams, 1 Chart, 5 Graphs |
| Abstrakt: |
We have studied n- and p-type doping-induced performance degradation of AlAs/GaAs distributed Bragg reflectors (DBRs) for applications in vertical cavity lasers (VCLs). Based on high-accuracy optical reflectance and triple-axis x-ray diffraction measurements on a variety of differently doped DBR structures grown by metalorganic vapor-phase epitaxy, a fitting procedure was employed to extract the doping-dependent optical loss. A striking observation is that the reflectance of these DBRs is much more sensitive to n- than p-type doping incorporation. While in the latter case the loss can be well accounted for by intervalence-band and free-carrier absorption, additional loss mechanisms must be considered for n-type DBRs. We relate the losses to doping-enhanced interdiffusion effects resulting in increased interface scattering. These findings should have important consequences for the design of VCLs, demonstrating the importance of reduced n-type doping concentrations and/or growth temperatures, or the application of alternative device concepts, e.g., employing intracavity contacts. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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