| Autor: |
Scholz, R., Gösele, U., Wischmeyer, F., Niemann, E. |
| Předmět: |
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| Zdroj: |
Applied Physics A: Materials Science & Processing; 1998, Vol. 66 Issue 1, p59, 9p |
| Abstrakt: |
Abstract. Chemical vapor deposition (CVD) carbonization experiments were carried out on (100) silicon substrates. Scanning and transmission electron microscopy (SEM and TEM) were used to detect and characterize the interlace defects. Conditions for preventing the formation of micropipes and voids at the SiC/Si interfaces were found. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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