| Autor: |
Bachhofer, H., Reisinger, H., Bertagnolli, E., von Philipsborn, H. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 3/1/2001, Vol. 89 Issue 5, p2791, 10p, 4 Diagrams, 2 Charts, 9 Graphs |
| Abstrakt: |
The voltage- and time-dependence of the tunneling currents in polysilicon-oxide-nitride-oxide semiconductor structures have been investigated. Electron and hole contributions were separated using a shallow junction technique. The standard tunneling model for charge injection was successfully applied to describe the observed threshold voltage shifts. For both positive and negative gate voltages, the time-dependence of the current density through the tunneling oxide is given by a simple analytical equation. This equation is characterized by an initial time constant and an asymptotic t[sup -1]-dependence. At large programming times the current density follows the t[sup -1]-dependence, independent of the tunneling oxide thickness and applied voltage. Under positive polarity (write) electrons are injected from the substrate. Under negative polarity (erase) and previous injection electron back-tunneling rather than hole injection is dominant at the beginning of erasing. At the end of erasing, steady-state conduction can be dominated either by electrons or holes, depending on the applied voltage. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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