| Autor: |
Sabbah, A. J., Riffe, D. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/1/2000, Vol. 88 Issue 11, p6954, 3p |
| Abstrakt: |
We demonstrate that ultrafast pump-probe reflectivity measurements from bulk Si samples using a Ti:sapphire femtosecond oscillator (λ=800 nm) can be used to measure the Si surface recombination velocity. The technique is sensitive to recombination velocities greater than ∼10[sup 4] cm s[sup -1]. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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