| Autor: |
Uedono, Akira, Muramatsu, Makoto, Ubukata, Tomohiro, Watanabe, Masahito, Ichihashi, Toshinari, Suzuki, Ryoichi, Ohdaira, Toshiyuki, Mikado, Tomohisa, Takasu, Seiichi |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/1/2001, Vol. 89 Issue 7, 2 Black and White Photographs, 4 Graphs |
| Abstrakt: |
Vacancy-type defects introduced by the carburization of Si were studied by means of monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation were measured for Si substrates with carbon films at temperatures between 298 and 1473 K. The line-shape parameter S, which corresponds to the annihilation of positrons near the interface between the carbon film and the Si substrate, started to increase above 1173 K. This was attributed to the trapping of positrons by vacancy-type defects introduced by carburization. The major species of the defects detected by positron annihilation was identified to be vacancy clusters in the Si substrate. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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