| Autor: |
Mi Kyung Choi, Won Suk Han, Young Yi Kim, Bo Hyun Kong, Hyung Koun Cho, Jae Hyum Kim, Hong-Seok Seo, Kang-Pil Kim, Jung-Ho Lee |
| Předmět: |
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| Zdroj: |
Journal of Materials Science: Materials in Electronics; Dec2009, Vol. 20 Issue 12, p1214-1218, 5p, 3 Diagrams, 2 Graphs |
| Abstrakt: |
n-ZnO:Ga/ i-ZnO/ p-Si heterojunction light-emitting diodes were fabricated on patterned Si substrates with increased interface area where hole carriers were transported to the i-ZnO layer. The patterned Si substrates were prepared by electrochemical etching, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. In the patterned LED, the lower breakdown and greater leakage current under a reverse bias was attributed to the formation of a high density of grain boundaries and random tilting of the c-axis. Compared to an LED without patterning, the patterned substrates resulted in approximately 75% improvement in the output power of visible emission, which was attributed to a 1.33-fold increase in the heterojunction area and the increase in grain boundary density due to grain tilting. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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