| Autor: |
Honghua Du, Libera, Matthew, Zunde Yang, Po-Jen Lai, Jacobson, Dale C., Wang, Yu. C., Davis, Robert F. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/25/1993, Vol. 62 Issue 4, p423, 3p, 1 Black and White Photograph, 4 Graphs |
| Abstrakt: |
Examines the effect of self-implantation on structure and oxidation behavior of beta-silicon carbide crystals (SiC). Occurrence of lattice recovery during the implantation process; Acceleration of SiC oxidation rate; Absence of amorphization in the implanted region. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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