| Autor: |
Sengupta, D.K., Fang, W., Malin, J.I., Li, J., Horton, T., Curtis, A.P., Hsieh, K.C., Chaung, S.L., Chen, H., Feng, M., Stillman, G.E., Li, L., Liu, H.C., Bandara, K.M.S.V., Gunapala, S.D., Wang, W.I. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 7/7/1997, Vol. 71 Issue 1, p78, 3p, 2 Black and White Photographs, 4 Graphs |
| Abstrakt: |
Characterizes molecular beam epitaxy-grown GaAs/AlGaAs quantum-well infrared photodetectors. Production of GaAs-on-silicon substrate by metalorganic chemical-vapor deposition; Advantages of the detectors; Magnitude of absolute responsivity. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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