Near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes.

Autor: Young, D. K., Mack, M. P., Abare, A.C., Hansen, M., Coldren, L.A.
Předmět:
Zdroj: Applied Physics Letters; 4/19/1999, Vol. 74 Issue 16, p2349, 3p, 6 Black and White Photographs, 1 Diagram, 2 Graphs
Abstrakt: Investigates the near-field scanning optical microscopy of indium gallium nitride multiple-quantum-well laser diodes. Imaging of facet cross sections; Observation of spatially resolved spectra near the active region; Observation of single-mode emission.
Databáze: Complementary Index