Large temperature changes induced by molecular beam epitaxial growth on radiatively heated....
| Autor: | Shanabrook, B.V., Waterman, J.R. |
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| Zdroj: | Applied Physics Letters; 11/9/1992, Vol. 61 Issue 19, p2338, 3p, 3 Graphs |
| Abstrakt: | Examines large temperature changes induced by molecular beam epitaxial growth of indium arsenide, gallium antimonide, aluminum antimonide, and gallium arsenide (GaAs) films. Decrease of energy gap of the GaAs substrate; Difficulty of observing the changes; Feasibility of the optical absorption measurements. |
| Databáze: | Complementary Index |
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