Optimization of sub 3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide....
| Autor: | Kumar, Kiran, Chou, Anthony I. |
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| Zdroj: | Applied Physics Letters; 1/20/1997, Vol. 70 Issue 3, p384, 3p, 1 Chart, 4 Graphs |
| Abstrakt: | Evaluates the optimization of the growth of ultrathin oxynitrides in the sub three nanometer range. Involvement of self-limiting growth in nitric oxide in the oxynitride growth technique; Reoxidation in oxygen or nitrous oxide ambient; Characterization of the reliability of oxynitrides. |
| Databáze: | Complementary Index |
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