Complementary model for intrinsic time-dependent dielectric breakdown in SiO[sub2] dielectrics.
| Autor: | McPherson, J. W., Khamankar, R. B., Shanware, A. |
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| Zdroj: | Journal of Applied Physics; 11/1/2000, Vol. 88 Issue 9, p5351, 9p, 3 Black and White Photographs, 1 Diagram, 7 Graphs |
| Abstrakt: | Discusses a complementary model for intrinsic time-dependent dielectric breakdown in silicon oxide dielectrics. Effect of time-dependent dielectric breakdown; Molecular models for dielectric degradation; Electron and hole injection into silicon oxide. |
| Databáze: | Complementary Index |
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