| Autor: |
Olson, Joseph C., Gupta, Atul, Gossmann, Hans-Joachim L., Rodier, Dennis |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 11/3/2008, Vol. 1066 Issue 1, p324-327, 4p, 4 Graphs |
| Abstrakt: |
Angle control continues to increase in importance with device scaling. For instance, threshold voltage and on-state current in advanced logic devices depend critically on the angle accuracy of medium current halo implants. TCAD simulation results, showing that on-state current changes of greater than 1% per degree of implant angle are possible, are presented. We report here on improvements to angle performance and control in both the horizontal and vertical directions. Beam data covering the full operating space of the VIISta 900XP is presented, demonstrating total angle control of better than ±0.2°. The data set is chosen to emphasize performance of typical halo implants. Single wafer high energy angle control data is also presented. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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