| Autor: |
Smith, A. J., Yeong, S. H., Colombeau, B., Sealy, B. J., Gwilliam, R. M. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 11/3/2008, Vol. 1066 Issue 1, p38-41, 4p, 4 Graphs |
| Abstrakt: |
Vacancy Engineering has previously been shown to be highly efficient in improving the junction properties of a p-type boron implant. This study examines the effect of a Vacancy Engineering Implant (VEI) prior to a low-energy n-type phosphorous implant. These initial results indicate that an excess of vacancies not only reduces the observed enhanced diffusion but also reduces the inherent electrical deactivation/reactivation process. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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