Rapid thermal oxidation of silicon in ozone.

Autor: Cui, Zhenjiang, Madsen, Jonathan M.
Předmět:
Zdroj: Journal of Applied Physics; 6/1/2000, Vol. 87 Issue 11, p8181, 6p, 2 Charts, 5 Graphs
Abstrakt: Presents a study which examined the thermal oxidation of silicon in ozone gas and its resulting oxides which are characterized using infrared spectroscopy. Results and discussion; Summary and conclusions.
Databáze: Complementary Index