Rapid thermal oxidation of silicon in ozone.
Autor: | Cui, Zhenjiang, Madsen, Jonathan M. |
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Předmět: | |
Zdroj: | Journal of Applied Physics; 6/1/2000, Vol. 87 Issue 11, p8181, 6p, 2 Charts, 5 Graphs |
Abstrakt: | Presents a study which examined the thermal oxidation of silicon in ozone gas and its resulting oxides which are characterized using infrared spectroscopy. Results and discussion; Summary and conclusions. |
Databáze: | Complementary Index |
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