| Autor: |
Atkin, J. M., Song, D., Shaw, T. M., Cartier, E., Laibowitz, R. B., Heinz, T. F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; May2008, Vol. 103 Issue 9, p094104, 6p, 1 Diagram, 5 Graphs |
| Abstrakt: |
Measurements of photoinduced current have been performed on thin films of porous low-k dielectric materials comprised of carbon-doped oxides. The dielectric films were deposited on silicon surfaces and prepared with a thin gold counterelectrode. From the spectral dependence of the photoinduced current, barrier heights for the dielectric/silicon and dielectric/gold interface were deduced. Transient currents were also found to flow after the photoexcitation was abruptly stopped. An estimate of the density of shallow electron traps within the low-k material was obtained from the measurement of the net charge transported from this detrapping current. A density of traps in the range of 6×1016 traps/cm3 was inferred for the low-k films, far exceeding that observed by the same technique for reference dielectric films of pure SiO2. This behavior was also compatible with photocurrent I-V measurements on the low-k dielectric films and SiO2 reference sample. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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