Autor: |
Novikov, I. I., Gordeev, N. Yu., Shernyakov, Yu. M., Kiselev, Yu. Yu., Maximov, M. V., Kop'ev, P. S., Sharon, A., Duboc, R., Arbiv, D. B., Ben-Ami, U., Shchukin, V. A., Ledentsov, N. N. |
Předmět: |
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Zdroj: |
Applied Physics Letters; 3/10/2008, Vol. 92 Issue 10, p103515, 3p, 4 Graphs |
Abstrakt: |
We report on 980 nm InGaAs/AlGaAs lasers with a broad waveguide based on a longitudinal photonic band crystal concept. The beam divergence measured as full width at half maximum was as narrow as <5° (vertical). Broad area 100 μm multimode devices demonstrated >15 W pulsed operation as limited by the current source. Significantly increased modal spot size enabled stable single lateral mode operation in broad ridge 10 μm stripes. Maximum continuous wave power in single mode regime of 1.3 W for 10 μm wide stripe lasers was obtained, being limited by the catastrophic degradation of the unpassivated laser facets. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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