| Autor: |
Brotherton, S.D., McCulloch, D.J., Gowers, J. P., Ayres, J. R., Trainor, M. J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/15/1997, Vol. 82 Issue 8, p4086, 9p, 3 Black and White Photographs, 14 Graphs |
| Abstrakt: |
Investigates the influence of film thickness and incident excimer laser energy density on the properties of poly-Si thin film transistors. Effect of static irradiations using a semi-Gaussian laser beam; Effect mobilities for n- and p-channel TFT. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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