Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs.

Autor: Siegel, W., Schulte, S., Reichel, C., Kühnel, G., Monecke, J.
Předmět:
Zdroj: Journal of Applied Physics; 10/15/1997, Vol. 82 Issue 8, p3832, 4p, 1 Black and White Photograph, 3 Graphs
Abstrakt: Studies the undoped liquid encapsulated Czochralski grown GaAs crystals with a transition from semi-insulating to medium-resistivity behavior. Value of the Hall mobility at 300K; Anomalous temperature dependence of MuH characterized; Observation of MuH with increasing temperature for T less than 400 K.
Databáze: Complementary Index