| Autor: |
Indutnyy, I. Z., Maǐdanchuk, I. Yu., Min'ko, V. I., Shepelyavyǐ, P. E., Dan'ko, V. A. |
| Předmět: |
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| Zdroj: |
Semiconductors; Oct2007, Vol. 41 Issue 10, p1248-1254, 7p, 6 Graphs |
| Abstrakt: |
The effect of chemical treatment in saturated vapors of ammonia and acetone on the spectral composition and intensity of photoluminescence in porous SiO x films containing Si nanocrystals ( nc-Si) is studied. The porosity of the SiO x films is provided by oblique vacuum deposition of thermally evaporated silicon or silicon monoxide on polished silicon substrates. The kinetics of adsorption of the vapors is monitored by variations in the frequency of a quartz oscillator on which the films to be studied are deposited. As a result of chemical treatment followed by high-temperature annealing of the SiO x films at the temperature 950°C, a new band, absent from the as-prepared films, appears in the photoluminescence spectrum at shorter wavelengths. The peak position and intensity of the band depend, correspondingly, on the composition of the film and on the time duration of the treatment. It is found that the new photoluminescence band is quenched upon exposure to laser radiation at the wavelength 488 nm. The quenching is more pronounced at the band peak. The possibility of controlling the characteristics of photoluminescence of the porous structures by chemical treatment is shown. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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