| Autor: |
Pelosi, Claudio, Bosi, Matteo, Attolini, Giovanni, Germini, Fabrizio, Frigeri, Cesare, Prutskij, Tatiana |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2007, Vol. 893 Issue 1, p29-30, 2p, 1 Black and White Photograph, 2 Graphs |
| Abstrakt: |
The diffusion phenomena at interfaces between GaAs/InGaP layers grown by low pressure MOVPE have been studied by dark field (DF) transmission Electron Microscopy (TEM) and High resolution X-ray Diffractometry (HRXRD). By comparing the results of the two techniques a mismatched layer containing P or P and In has been evidenced. The causes of this behavior are briefly discussed. © 2007 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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