| Autor: |
Founta, S., Coraux, J., Jalabert, D., Bougerol, C., Rol, F., Mariette, H., Renevier, H., Daudin, B., Oliver, R. A., Humphreys, C. J., Noakes, T. C. Q., Bailey, P. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 3/15/2007, Vol. 101 Issue 6, p063541-1, 7p, 4 Diagrams, 5 Graphs |
| Abstrakt: |
Medium energy ion scattering (MEIS) has been used to measure at the monolayer scale the strain profile of self-organized GaN quantum dots grown on (11–20) or a-plane AlN by molecular-beam epitaxy. By confronting the MEIS results with a structural analysis carried out by atomic force microscopy, it is established that the strain profile is anisotropic, i.e., fully elastic along [1–100] and a combination of plastic and elastic along [0001]. High resolution transmission electron microscopy measurements reveal the presence of misfit dislocations with 1/2 [0001] Burgers vector, consistent with MEIS data. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
