Investigation on the bandgap of semiconductor solid solution Hg1-x-y-zCdxMnyZnzTe.

Autor: Zhikharevich, V. V., Ostapov, S. E., Deibuk, V. G.
Předmět:
Zdroj: Semiconductor Physics, Quantum Electronics & Optoelectronics; 2006, Vol. 9 Issue 3, p17-21, 5p
Abstrakt: The paper presents a investigation on the bandgap of a new narrow-gap semiconductor solid solution Hg1-x-y-zCdxMnyZnzTe via optical measurements. Modeling of the edge of fundamental absorption for Hg1-x-y-zCdxMnyZnzTe is performed and specifying values of the bandgap at room temperature in crystals under study are determined. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index