| Autor: |
van den Oever, P. J., van Helden, J. H., van Hemmen, J. L., Engeln, R., Schram, D. C., van de Sanden, M. C. M., Kessels, W. M. M. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/2006, Vol. 100 Issue 9, p093303, 10p, 1 Diagram, 2 Charts, 6 Graphs |
| Abstrakt: |
The densities of N, NH, and NH2 radicals in a remote Ar–NH3–SiH4 plasma used for high-rate silicon nitride deposition were investigated for different gas mixtures and plasma settings using cavity ringdown absorption spectroscopy and threshold ionization mass spectrometry. For typical deposition conditions, the N, NH, and NH2 radical densities are on the order of 1012 cm-3 and the trends with NH3 flow, SiH4 flow, and plasma source current are reported. We present a feasible reaction pathway for the production and loss of the NHx radicals that is consistent with the experimental results. Furthermore, mass spectrometry revealed that the consumption of NH3 was typically 40%, while it was over 80% for SiH4. On the basis of the measured N densities we deduced the recombination and sticking coefficient for N radicals on a silicon nitride film. Using this sticking coefficient and reported surface reaction probabilities of NH and NH2 radicals, we conclude that N and NH2 radicals are mainly responsible for the N incorporation in the silicon nitride film, while Si atoms are most likely brought to the surface in the form of SiHx radicals. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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