| Autor: |
Mastro, M. A., Fatemi, M., Gaskill, D. K., Lew, K.-K., Van Mil, B. L., Eddy, C. R., Wood, C. E. C. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/1/2006, Vol. 100 Issue 9, p093510, 5p, 2 Diagrams, 3 Graphs |
| Abstrakt: |
Bulk growth of 4H-SiC is challenging due to the required high growth temperatures and gradients used in sublimation physical vapor transport that are difficult to control, particularly over large diameter boules. We used x-ray diffraction mapping to show concave crystal plane curvature in substrates from five commercial suppliers with two suppliers producing wafers with <=2° curvature. The extent of curvature varied little for substrates from any particular supplier. Maps of peak position and full width at half maximum from symmetric and asymmetric reflections were used to identify defective regions in the crystal. Closer examination of the rocking curves in the defective regions found a low density of low angle grain boundaries only in substrates from one supplier. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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