| Autor: |
McLaurin, M., Mates, T. E., Wu, F., Speck, J. S. |
| Předmět: |
|
| Zdroj: |
Journal of Applied Physics; 9/15/2006, Vol. 100 Issue 6, p063707, 7p, 3 Black and White Photographs, 6 Graphs |
| Abstrakt: |
Plasma-assisted molecular beam epitaxial growth of Mg-doped, p-type and Si-doped, n-type m-plane GaN on 6H m-plane SiC is demonstrated. Phase-pure, m-plane GaN films exhibiting a large anisotropy in film mosaic (∼0.2° full width at half maximum, x-ray rocking curve scan taken parallel to [1120] versus ∼2° parallel to [0001]) were grown on m-plane SiC substrates. Maximum hole concentrations of ∼7 × 1018 cm−3 were achieved with p-type conductivities as high as ∼5 Ω−1 cm−1 without the presence of Mg-rich inclusions or inversion domains as viewed by cross-section transmission electron microscopy. Temperature dependent Hall effect measurements indicate that the Mg-related acceptor state in m-plane GaN is the same as that exhibited in c-plane GaN. Free electron concentrations as high as ∼4 ×1018 cm−3 were measured in the Si-doped m-plane GaN with corresponding mobilities of ∼500 cm2/V s measured parallel to the [1120] direction. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
