Counterdoped very shallow p+/n junctions obtained by B and Sb implantation and codiffusion in Si.
| Autor: | Solmi, Sandro |
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| Zdroj: | Journal of Applied Physics; 2/1/1998, Vol. 83 Issue 3, p1742, 6p, 16 Graphs |
| Abstrakt: | Presents a study which investigated the codiffusion of B and Sb upon postimplantation annealing, in an attempt to fabricate very shallow p+/n mjunctions which are suitable for a complementary metal-oxide-semiconductor technology with a channel length of 0.18...m. How these junctions prepared; Comparison of experimental results. |
| Databáze: | Complementary Index |
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