| Autor: |
S. S. Lavrushina, I. Ya. Mittova, O. V. Artamonova, G. O. Vladimirov |
| Zdroj: |
Russian Microelectronics; Jul2003, Vol. 32 Issue 4, p200-204, 5p |
| Abstrakt: |
The thermal oxidation of GaAs and InP is investigated when Al2(SO4)3 is introduced into the oxidizing atmosphere. It is found that the stimulator accelerates the reaction in both cases. The process and films are examined by laser ellipsometry, IR spectroscopy, and XRF. On this basis the role is identified of the stimulator anionic component, which causes the oxidation to branch and increases its rate. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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