| Autor: |
Chien-Chung Hung, Ming-Jer Kao, Young-Shying Chen, Yung-Hung Wang, Yuan-Jen Lee, Wei-Chuan Chen, Wen-Chin Lin, Kuei-Hung Shen, Kuo-Lung Chen, Shiuh Chao, Denny Duan-Lee Tang, Ming-Jinn Tsai |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jul2006, Vol. 53 Issue 7, p1530-1538, 9p, 12 Black and White Photographs, 12 Diagrams, 1 Chart, 7 Graphs |
| Abstrakt: |
Novel cell structures based on one transistor and two uneven magnetic tunnel junction cell and pillar write word line architecture are proposed to shrink the bit size with a potential down to 6 F² by a so-called extended via process, and to reduce the writing current by a factor of 2, combined with the nature of nonvolatility and high speed, making the magnetoresistive random access memory suitable for universal memory applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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