Praseodymium Silicate as a High-k Dielectric Candidate: An Insight into the Pr2O3-Film/Si-Substrate Interface Fabricated Through a Metal–Organic Chemical Vapor Deposition ProcessThis work has been partially supported by MIUR (Ministero dell'Istruzione, dell'Università e della Ricerca).

Autor: R. Lo Nigro, R. G. Toro, G. Malandrino, G. G. Condorelli, V. Raineri, I. L. Fragalà
Zdroj: Advanced Functional Materials; May2005, Vol. 15 Issue 5, p838-845, 8p
Databáze: Complementary Index
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