| Autor: |
Miin-Horng MJ Juang, Yi-Ming YC Chiu |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Dec2005, Vol. 20 Issue 12, p1223-1225, 3p |
| Abstrakt: |
A novel polycrystalline silicon (poly-Si) thin film transistor (TFT) formed by using the large-angle-tilt-implanted-drain (LATID) scheme has been proposed. The LATID TFT can achieve much smaller off-state leakage than the lightly doped drain (LDD) TFT. The result is attributable to the reduced electric field near the drain region and thus more effective suppression of carrier emission via trap states. Moreover, the on-state current does not have a large difference in comparison with the LDD TFT, due to the gate-overlapped structure formed by using a simple fabrication process. As a result, a poly-Si TFT with excellent device characteristics and a high on/off current ratio can be implemented by simply using the LATID fabrication scheme. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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