| Autor: |
Huaqiang Wu, Poitras, Carl B., Lipson, Michal, Spencer, Michael G., Hunting, Janet, DiSalvo, Francis J. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 1/2/2006, Vol. 88 Issue 1, p011921, 3p, 1 Black and White Photograph, 3 Graphs |
| Abstrakt: |
A high yield process to produce gallium nitride (GaN) powder doped with europium (Eu) is presented. Eu is in situ incorporated into GaN powder through the reaction between a molten alloy of Ga and Eu along with NH3 at 1000 °C using Bi as a wetting agent. This procedure provides a method to produce a GaN:Eu phosphor with high yield and low cost. Room temperature photoluminescence (PL) measurements are studied on GaN:Eu powders with different Eu concentrations. The maximum PL intensity is obtained at a Eu concentration of 1.25 at. %. Cathodoluminescence spectra at room temperature exhibit many detailed transitions in the 530–630 nm range. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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