| Autor: |
Ohtake, Hiroto, Saito, Shinobu, Tada, Munehiro, Onodera, Takahiro, Hayashi, Yoshihiro |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Semiconductor Manufacturing; Nov2005, Vol. 18 Issue 4, p672-680, 9p |
| Abstrakt: |
The plasma-etching technology presented in this paper is for fabricating highly reliable Cu dual damascene inter-connects (DDI) with organic low-k film through modification of the in situ etched surface during low-k etching. Nitrogen-based plasma with oxygen and high-molecular-weight fluorocarbon gas (C > 2) chemically modifies the sidewall surface of the etched low-k film, changing it into the carbon nitride with fluorocarbon-polymer passivation from the etching gas. After wet cleaning, the fluorocarbon-polymer is removed selectively, leaving a carbon nitride modified layer (CNL) on the sidewall. The CNL has been found to suppress Cu diffusion into the low-k film. A stacked barrier structure of conventional barrier metal and CNL is expected to have high tolerance to Cu diffusion. Combining a dual-hard-mask etching sequence with the CNL modification, Cu DDIs with organic low-k film were fabricated with high yield. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
