| Autor: |
Qu, Y., Zhang, J. X., Uddin, A., Liu, C. Y., Yuan, S., Chan, M. C. Y., Bo, B., Liu, G., Jiang, H. |
| Předmět: |
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| Zdroj: |
Applied Physics A: Materials Science & Processing; Feb2006, Vol. 82 Issue 2, p305-308, 4p, 1 Black and White Photograph, 2 Charts, 4 Graphs |
| Abstrakt: |
Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-μm -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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