| Autor: |
Yavaş, Hasan, Alp, Esen Ercan, Sinn, Harald, Khachatryan, Ruben, Alataş, Ahmet, Said, Ayman H., Jiyong Zhao |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2005, Vol. 789 Issue 1, p299-305, 7p |
| Abstrakt: |
A better understanding of the electronic structure of correlated electron materials, such as transition metal oxides, sulfides, and phosphides, may be realized by improving the energy resolution for Resonant Inelastic X-ray Spectroscopy (RIXS). Current models based on the interplay between on-site Coulomb interaction, charge-transfer energy, and overlap of energy bands require a quantitative knowledge of location and dispersion of electronic energy levels near the Fermi level with a resolution better that the existing spectrometers, which vary between 100 meV and 500 meV in the energy range of 5–10 keV. Here, we propose a new spectrometer based on a back-reflecting sapphire analyzer that will improve the energy resolution to 30 meV for Fe, Ni, Cu, and Zn K-absorption-edge RIXS studies. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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