| Autor: |
Joo, Hyeong Jun, Yoon, Si Sung, Oh, Seung Yoon, Lim, Yoojin, Lee, Gyu Hyung, Yoo, Geonwook |
| Předmět: |
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| Zdroj: |
Electronics (2079-9292); Nov2024, Vol. 13 Issue 22, p4515, 9p |
| Abstrakt: |
The ferroelectric switching behavior of a metal–ferroelectric AlScN–HfO2 interlayer–metal (MFIM) capacitor was investigated at variable temperatures and compared with an MFM capacitor. Although the MFIM capacitor demonstrated an inferior remnant polarization (2Pr value of 74 µC/cm2), it exhibited a reduced leakage current (×1/100) and higher breakdown field. The MFIM showed a stable change in 2Pr from room temperature to 200 °C and an enhanced endurance of ~104 cycles at 200 °C; moreover, the leakage current was less degraded after the cycling tests. Thus, the ferroelectric AlScN with a thin HfO2 interlayer can enhance the reliability of ferroelectric switching. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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