Atomic layer deposition of ultrathin nitride films for enhanced carrier lifetimes and photoluminescence in CdTe/MgCdTe double heterostructures.

Autor: Abbasi, Haris Naeem, Qi, Xin, Ju, Zheng, Ma, Zhenqiang, Zhang, Yong-Hang
Předmět:
Zdroj: Journal of Applied Physics; 11/21/2024, Vol. 136 Issue 19, p1-6, 6p
Abstrakt: This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, and TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index