Autor: |
Abbasi, Haris Naeem, Qi, Xin, Ju, Zheng, Ma, Zhenqiang, Zhang, Yong-Hang |
Předmět: |
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Zdroj: |
Journal of Applied Physics; 11/21/2024, Vol. 136 Issue 19, p1-6, 6p |
Abstrakt: |
This work evaluates the passivation effectiveness of ultrathin nitride layers (SiNx, AlN, and TiN) deposited via atomic layer deposition on CdTe/MgCdTe double heterostructures for solar cell applications. Time-resolved photoluminescence and photoluminescence measurements revealed enhanced carrier lifetimes and reduced surface recombination, indicating improved passivation effectiveness. These results underscore the potential of SiNx as a promising passivation material to improve the efficiency of CdTe solar cells. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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